US 11,924,952 B2
Microwave assisted parallel plate e-field applicator
Jeffrey Edward Kowalski, San Jose, CA (US)
Assigned to DSGI Technologies, Inc., San Jose, CA (US)
Filed by DSGI TECHNOLOGIES, INC., San Jose, CA (US)
Filed on Apr. 17, 2020, as Appl. No. 16/851,281.
Application 16/851,281 is a division of application No. 15/009,070, filed on Jan. 28, 2016, granted, now 10,667,340.
Claims priority of provisional application 62/109,355, filed on Jan. 29, 2015.
Prior Publication US 2020/0245418 A1, Jul. 30, 2020
This patent is subject to a terminal disclaimer.
Int. Cl. H05B 6/80 (2006.01); H05B 6/64 (2006.01)
CPC H05B 6/80 (2013.01) [H05B 6/6411 (2013.01); H05B 6/6447 (2013.01); H05B 6/806 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method for annealing semiconductor material, the method comprising the steps of:
placing a target substrate including the semiconductor material between two plates within a uniform microwave field;
holding the target substrate upright; and
rotating the two plates and the target substrate about an axis along a diametric line of the target substrate, thereby creating a periodic change in polarity of microwaves applied to the target substrate from the uniform microwave field, such that the periodic change creates a flow of eddy currents within the target substrate that is perpendicular to a surface of the target substrate.