US 11,923,843 B2
Semiconductor device and memory device
Toshihiro Yagi, Yokohama (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Mar. 10, 2021, as Appl. No. 17/197,565.
Claims priority of application No. 2020-137454 (JP), filed on Aug. 17, 2020.
Prior Publication US 2022/0052689 A1, Feb. 17, 2022
Int. Cl. H03K 19/00 (2006.01); G11C 16/04 (2006.01)
CPC H03K 19/0005 (2013.01) [G11C 16/0483 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a buffer configured to perform data transmission by turning on and off a first output transistor group and a second output transistor group;
a first correction circuit including the first output transistor group and configured to calibrate a resistance value of the buffer by controlling on-off state of each of first transistors of the first output transistor group, wherein each of the first transistors is set to a resistance value with a different weight;
a second correction circuit including the second output transistor group and configured to calibrate the resistance value of the buffer by controlling an on-off state of each of second transistors of the second output transistor group, wherein each of the second transistors is set to a resistance value equal to or smaller than the resistance value of a transistor with a lightest weight among the first transistors; and
a control circuit configured to:
cause the calibration by the first correction circuit to be performed in a non-communication duration other than a duration of data transmission from the buffer;
control to start the data transmission from the buffer; and
cause the calibration by the second correction circuit to be performed in at least the duration of the data transmission from the buffer after a duration of the calibration by the first correction circuit,
wherein the first output transistor group has a first variable resistance value and the second output transistor group has a second variable resistance value that is equal to or less than the first variable resistance value.