US 11,923,825 B2
Semiconductor device and method for manufacturing the same
Cheng-Yuan Kung, Kaohsiung (TW); and Meng-Wei Hsieh, Kaohsiung (TW)
Assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung (TW)
Filed by Advanced Semiconductor Engineering, Inc., Kaohsiung (TW)
Filed on Jul. 22, 2021, as Appl. No. 17/383,264.
Prior Publication US 2023/0024293 A1, Jan. 26, 2023
Int. Cl. H03H 9/05 (2006.01); H01L 23/552 (2006.01); H03H 9/10 (2006.01); H03H 9/54 (2006.01); H05K 3/34 (2006.01); H01L 23/00 (2006.01)
CPC H03H 9/0552 (2013.01) [H01L 23/552 (2013.01); H03H 9/0542 (2013.01); H03H 9/10 (2013.01); H03H 9/54 (2013.01); H05K 3/34 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 2224/48105 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/4903 (2013.01); H01L 2924/14215 (2013.01)] 1 Claim
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
(a) providing a carrier with a set of electronic components disposed thereon, the set of electronic components having various heights;
(b) forming a layer on the set of electronic components to compensate for the various heights of the set of electronic components, wherein the layer is in contact with a first portion of a lateral surface of one of the set of electronic components, and exposes a second portion of the lateral surface; and
(c) electrically connecting an active device over the layer to at least one of the set of electronic components.