US 11,923,661 B2
Surface emitting laser and method of manufacturing the same
Takayuki Kawasumi, Kanagawa (JP); Hideki Kimura, Kanagawa (JP); Kota Tokuda, Kanagawa (JP); and Yoshiaki Watanabe, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/260,876
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jun. 14, 2019, PCT No. PCT/JP2019/023619
§ 371(c)(1), (2) Date Jan. 15, 2021,
PCT Pub. No. WO2020/017206, PCT Pub. Date Jan. 23, 2020.
Claims priority of application No. 2018-136388 (JP), filed on Jul. 20, 2018.
Prior Publication US 2021/0328408 A1, Oct. 21, 2021
Int. Cl. H01S 5/183 (2006.01); H01S 5/227 (2006.01)
CPC H01S 5/18311 (2013.01) [H01S 5/18344 (2013.01); H01S 5/18377 (2013.01); H01S 5/2275 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of manufacturing a surface emitting laser, the method comprising:
a first step of forming a semiconductor stacked structure on a substrate, the semiconductor stacked structure including an active layer, a first DBR (distributed Bragg reflector) layer of a first electrical conduction type, and a second DBR layer of a second electrical conduction type, the first DBR layer and the second DBR layer sandwiching the active layer, the second electrical conduction type being different from the first electrical conduction type; and
a second step of forming a mesa section at a portion on the second DBR layer side in the semiconductor stacked structure and then forming an annular diffusion region of the first electrical conduction type at an outer edge of the mesa section by impurity diffusion from a side surface of the mesa section, the mesa section including the second DBR layer, the mesa section not including the active layer.