US 11,923,480 B2
Light-emitting device and display device using the same
Taeil Jung, Goyang-si (KR); Il-Soo Kim, Goyang-si (KR); and YongSeok Kwak, Paju-si (KR)
Assigned to LG DISPLAY CO., LTD., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Mar. 17, 2022, as Appl. No. 17/697,653.
Application 16/878,215 is a division of application No. 16/152,711, filed on Oct. 5, 2018, granted, now 10,693,042, issued on Jun. 23, 2020.
Application 17/697,653 is a continuation of application No. 16/878,215, filed on May 19, 2020, granted, now 11,309,458.
Claims priority of application No. 10-2017-0157688 (KR), filed on Nov. 23, 2017; and application No. 10-2017-0167167 (KR), filed on Dec. 7, 2017.
Prior Publication US 2022/0209072 A1, Jun. 30, 2022
Int. Cl. H01L 33/38 (2010.01); H01L 25/16 (2023.01); H01L 33/14 (2010.01); H01L 33/32 (2010.01); H01L 33/44 (2010.01)
CPC H01L 33/387 (2013.01) [H01L 25/167 (2013.01); H01L 33/382 (2013.01); H01L 33/385 (2013.01); H01L 33/44 (2013.01); H01L 33/14 (2013.01); H01L 33/32 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A display device, comprising:
a substrate;
a driving device disposed on substrate;
a light-emitting device electrically connected to the driving device, comprising first and second areas;
a pixel electrode connected to the light-emitting device and the driving device; and
a common electrode connected to the light-emitting device and a common power line,
wherein the light-emitting device comprises:
a p-type semiconductor layer comprising a first p-type semiconductor layer in the first area and a second p-type semiconductor layer in the second area;
an n-type semiconductor layer comprising a first n-type semiconductor layer in the first area and a second n-type semiconductor layer in the second area;
an active layer between the p-type semiconductor layer and the n-type semiconductor layer;
a first electrode on the p-type semiconductor layer and having a first inner electrode connected to the second n-type semiconductor layer in the second area;
a second electrode on the n-type semiconductor layer and having a second inner electrode connected to the second p-type semiconductor layer in the second area;
a first wall by which the first and second p-type semiconductor layers are divided from each other; and
a second wall by which the first and second n-type semiconductor layers are divided from each other,
wherein the first p-type semiconductor layer and the first n-type semiconductor layer are disposed in the first area configured to emit light when a forward bias is applied to the first electrode connected to the first p-type semiconductor layer and the second electrode connected to the first n-type semiconductor layer, and
wherein the second p-type semiconductor layer and the second n-type semiconductor layer are disposed in the second area configured to emit light when a reverse bias is applied to the first electrode connected to the second n-type semiconductor layer and the second electrode connected to the second p-type semiconductor layer.