US 11,923,462 B2
Lateral Schottky diode
Timothy E. Boles, Tyngsboro, MA (US); Douglas Carlson, Lowell, MA (US); and Anthony Kaleta, Lowell, MA (US)
Assigned to MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC., Lowell, MA (US)
Filed by MACOM Technology Solutions Holdings, Inc., Lowell, MA (US)
Filed on Mar. 24, 2021, as Appl. No. 17/211,116.
Application 17/211,116 is a continuation of application No. 15/223,677, filed on Jul. 29, 2016, granted, now 10,985,284.
Claims priority of provisional application 62/323,564, filed on Apr. 15, 2016.
Prior Publication US 2021/0210642 A1, Jul. 8, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/872 (2006.01); H01L 21/761 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/861 (2006.01); H02M 7/00 (2006.01)
CPC H01L 29/872 (2013.01) [H01L 21/761 (2013.01); H01L 29/0646 (2013.01); H01L 29/0649 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/402 (2013.01); H01L 29/404 (2013.01); H01L 29/66143 (2013.01); H01L 29/66212 (2013.01); H01L 29/7786 (2013.01); H01L 29/861 (2013.01); H02M 7/003 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A Schottky diode comprising:
a conduction layer;
a first layer comprising a first semiconductor material over the conduction layer;
a second layer comprising a second semiconductor material over the first layer, the first semiconductor material being different than the second semiconductor material;
a first cathode and a second cathode, spaced apart and in electrical contact with the conduction layer, the first cathode and the second cathode being electrically connected to each other as a cathode of the Schottky diode; and
an anode over the second layer between the first cathode and the second cathode.