US 11,923,424 B2
Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor
Ibrahim Khalil, Gilbert, AZ (US); Bernhard Grote, Phoenix, AZ (US); Humayun Kabir, Gilbert, AZ (US); and Bruce McRae Green, Gilbert, AZ (US)
Assigned to NXP B.V., Eindhoven (NL)
Filed by NXP B.V., Eindhoven (NL)
Filed on Dec. 31, 2020, as Appl. No. 17/139,636.
Prior Publication US 2022/0208975 A1, Jun. 30, 2022
Int. Cl. H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/402 (2013.01) [H01L 29/0649 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/404 (2013.01); H01L 29/66462 (2013.01); H01L 29/78 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate that includes an upper surface and a channel;
a first dielectric layer disposed over the upper surface of the semiconductor substrate;
a first current-carrying electrode and a second current-carrying electrode formed over the semiconductor substrate within openings formed in the first dielectric layer, wherein the first current-carrying electrode and the second current-carrying electrode are electrically coupled to the channel;
a control electrode formed over the semiconductor substrate and disposed between the first current-carrying electrode and the second current-carrying electrode and over the first dielectric layer, wherein the control electrode is electrically coupled to the channel;
a first conductive element formed over the first dielectric layer, electrically insulated from and adjacent to the control electrode, formed between the control electrode and the second current-carrying electrode;
a second dielectric layer disposed over the control electrode and over the first conductive element; and
a second conductive element disposed over the second dielectric layer and over the first conductive element, wherein a portion of the second conductive element is below an upper surface of the first conductive element between the control electrode and the first conductive element.