US 11,923,420 B2
Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator
Tatsuo Shimizu, Shinagawa (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP)
Filed on Jan. 20, 2023, as Appl. No. 18/157,423.
Application 18/157,423 is a division of application No. 16/992,172, filed on Aug. 13, 2020, granted, now 11,588,023.
Claims priority of application No. 2020-044566 (JP), filed on Mar. 13, 2020.
Prior Publication US 2023/0154988 A1, May 18, 2023
Int. Cl. H01L 29/16 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01)
CPC H01L 29/1608 (2013.01) [H01L 29/0878 (2013.01); H01L 29/41725 (2013.01); H01L 29/456 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor device comprising:
forming a first metal film on a silicon carbide layer, the first metal film containing one metal element (M) selected from a group consisting of nickel (Ni), palladium (Pd), and platinum (Pt);
heat treating, in an atmosphere containing at least any one of carbon dioxide and atomic hydrogen after the forming the first metal film, the silicon carbide layer and the first metal film to form a metal silicide layer containing the metal element; and
forming a second metal film having a chemical composition different from a chemical composition of the first metal film on the metal silicide layer after performing the heat treating.