US 11,923,405 B2
Metal-insulator-metal structure and methods of fabrication thereof
Chih-Fan Huang, Kaohsiung (TW); Hung-Chao Kao, Taipei (TW); Yuan-Yang Hsiao, Taipei (TW); Tsung-Chieh Hsiao, Changhua County (TW); Hsiang-Ku Shen, Hsinchu (TW); Hui-Chi Chen, Hsinchu County (TW); Dian-Hau Chen, Hsinchu (TW); and Yen-Ming Chen, Hsin-Chu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on May 23, 2022, as Appl. No. 17/750,729.
Application 16/983,880 is a division of application No. 16/156,779, filed on Oct. 10, 2018, granted, now 10,734,474, issued on Aug. 4, 2020.
Application 17/750,729 is a continuation of application No. 16/983,880, filed on Aug. 3, 2020, granted, now 11,342,408.
Claims priority of provisional application 62/711,711, filed on Jul. 30, 2018.
Prior Publication US 2022/0285479 A1, Sep. 8, 2022
Int. Cl. H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01); H10B 61/00 (2023.01)
CPC H01L 28/60 (2013.01) [H01L 21/31116 (2013.01); H01L 21/76804 (2013.01); H01L 21/76805 (2013.01); H10B 61/10 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
an insulating layer disposed on the substrate;
a first conductive feature disposed in the insulating layer;
a capacitor structure disposed on the insulating layer and comprising a first electrode, a first dielectric layer, a second electrode, a second dielectric layer, and a third electrode sequentially stacked;
a first via connected to the first electrode and the third electrode, a part of the first via being disposed in the insulating layer;
a second via connected to the second electrode; and
a third via connected to the first conductive feature, wherein a portion of the first conductive feature is directly under the capacitor structure, and wherein in a cross section of the semiconductor device the second via is positioned laterally between the first via and the third via.