US 11,923,349 B2
Semiconductor structures
Chi-Hui Lai, Taichung (TW); Chen-Hua Yu, Hsinchu (TW); Chung-Shi Liu, Hsinchu (TW); Hao-Yi Tsai, Hsinchu (TW); and Tin-Hao Kuo, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 30, 2022, as Appl. No. 17/855,780.
Application 17/855,780 is a continuation of application No. 17/023,379, filed on Sep. 17, 2020, granted, now 11,417,638.
Application 17/023,379 is a continuation of application No. 16/260,151, filed on Jan. 29, 2019, granted, now 10,790,269, issued on Sep. 29, 2020.
Prior Publication US 2022/0336432 A1, Oct. 20, 2022
Int. Cl. H01L 25/16 (2023.01); H01L 23/31 (2006.01); H01L 23/40 (2006.01); H01L 23/498 (2006.01); H01L 23/50 (2006.01); H01R 12/70 (2011.01)
CPC H01L 25/16 (2013.01) [H01L 23/3128 (2013.01); H01L 23/4006 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/50 (2013.01); H01R 12/7047 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a die;
a first connector disposed on the die, comprising:
a first connecting housing;
a first connecting element electrically connected to the die and disposed at a first side of the first connecting housing; and
a first connecting portion at a second side different from the first side of the first connecting housing, wherein the first connecting portion is one of a hole and a protrusion with respect to a surface of the second side of the first connecting housing; and
a second connecting portion disposed at a third side opposite to the second side of the first connecting housing, wherein the second connecting portion is the other of the hole and the protrusion with respect to a surface of the third side of the first connecting housing.