US 11,923,317 B2
Semiconductor devices
Changjoon Yoon, Seoul (KR); Sunme Lim, Yongin-si (KR); Kyeong-Yeol Kwak, Gunpo-si (KR); and Soojung Kim, Ansan-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 14, 2021, as Appl. No. 17/230,416.
Claims priority of application No. 10-2020-0114608 (KR), filed on Sep. 8, 2020.
Prior Publication US 2022/0077073 A1, Mar. 10, 2022
Int. Cl. H01L 21/66 (2006.01); G03F 7/00 (2006.01); H01L 23/528 (2006.01); H01L 23/544 (2006.01)
CPC H01L 23/544 (2013.01) [G03F 7/70483 (2013.01); H01L 22/32 (2013.01); H01L 23/528 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a first lower pattern group on the substrate, wherein the first lower pattern group comprises a first key pattern and a plurality of first lower test patterns that are horizontally spaced apart from the first key pattern; and
a first upper pattern group on the first lower pattern group, wherein the first upper pattern group comprises a plurality of first pads that are horizontally spaced apart from each other and a plurality of first upper test patterns between adjacent ones of the plurality of first pads,
wherein the first key pattern is configured to be used for a photography process associated with fabrication of the semiconductor device,
wherein the plurality of first pads are electrically connected to the plurality of first upper test patterns, and
wherein one of the plurality of first pads vertically overlaps with the first key pattern.