US 11,923,314 B2
Semiconductor package including a trench in a passivation layer
Ik Kyu Jin, Cheonan-si (KR); Jin Su Kim, Seoul (KR); and Ki Ju Lee, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 16, 2021, as Appl. No. 17/203,312.
Claims priority of application No. 10-2020-0074048 (KR), filed on Jun. 18, 2020.
Prior Publication US 2021/0398908 A1, Dec. 23, 2021
Int. Cl. H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 25/10 (2006.01)
CPC H01L 23/5389 (2013.01) [H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/20 (2013.01); H01L 25/105 (2013.01); H01L 2224/214 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/19106 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor package comprising:
a connection structure comprising a redistribution layer;
a plurality of under bump metal layers on the connection structure and electrically connected to the redistribution layer;
a passivation layer on the connection structure, wherein the passivation layer overlaps at least portions of side faces of the plurality of under bump metal layers, and wherein the passivation layer comprises a first trench between under bump metal layers adjacent to each other among the plurality of under bump metal layers;
a surface mounting element that is on the under bump metal layers adjacent to each other, that is electrically connected to the redistribution layer, and that overlaps the first trench; and
an underfill material layer that is between a portion of the passivation layer and a portion of the surface mounting element, and is in the first trench,
wherein the first trench extends in a first direction that is a length direction of the surface mounting element, and comprises a first sub-trench having a first width in a second direction perpendicular to the first direction, and a second sub-trench having a second width different from the first width in the second direction,
wherein the first trench further comprises a third sub-trench connected to the second sub-trench and having a third width in the second direction,
wherein the second sub-trench is between the first sub-trench and the third sub-trench, and
wherein the second width is greater than the third width and smaller than the first width.