US 11,923,296 B2
Semiconductor device
Naohito Suzumura, Tokyo (JP); Kenichiro Sonoda, Tokyo (JP); and Hideaki Tsuchiya, Tokyo (JP)
Assigned to RENESAS ELECTRONICS CORPORATION, Tokyo (JP)
Filed by RENESAS ELECTRONICS CORPORATION, Tokyo (JP)
Filed on Jun. 15, 2022, as Appl. No. 17/841,203.
Claims priority of application No. 2021-143196 (JP), filed on Sep. 2, 2021.
Prior Publication US 2023/0061976 A1, Mar. 2, 2023
Int. Cl. H01L 23/525 (2006.01)
CPC H01L 23/5256 (2013.01) 17 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an electric fuse element having a first portion, a second portion arranged at one end of the first portion, and a third portion arranged at another end of the first portion;
an interlayer dielectric layer covering the electric fuse element; and
a resistance layer on the interlayer dielectric layer, the resistance layer being formed of silicon metal and being arranged directly above the electric fuse element,
wherein each of a wiring width of the second portion and a wiring width of the third portion is greater than a wiring width of the first portion, and
wherein the silicon metal is silicon chromium or carbon-doped silicon chromium.