US 11,923,291 B2
Via connection to wiring in a semiconductor device
Atsushi Kato, Yokkaichi Mie (JP)
Assigned to KIOXIA CORPORATION, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Aug. 31, 2020, as Appl. No. 17/007,626.
Claims priority of application No. 2020-029592 (JP), filed on Feb. 25, 2020.
Prior Publication US 2021/0265265 A1, Aug. 26, 2021
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 21/76849 (2013.01); H01L 21/7685 (2013.01); H01L 21/76856 (2013.01); H01L 21/76864 (2013.01); H01L 24/08 (2013.01); H01L 21/7684 (2013.01); H01L 2224/08112 (2013.01); H01L 2224/08145 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a first insulating film disposed above the substrate;
a wiring disposed in the first insulating film, the wiring extending in a first direction along an upper surface of the substrate, the wiring having a first film and a first metal layer that is disposed on the first film;
a plug disposed on the wiring, the plug extending in a second direction that intersects the first direction, the plug electrically connected to the wiring;
a first layer containing a metal oxide or a metal nitride, the first layer disposed between the plug and the wiring; and
a second metal layer disposed between the first layer and the first metal layer, the second metal layer having a different composition from the first layer,
wherein the first film, the first layer and the second metal layer contain a same first metal element, and
the wiring includes a first wiring and a second wiring adjacent to the first wiring, wherein the first film of the first wiring and the first film of the second wiring have a different thickness.