US 11,923,239 B2
Structures for radiofrequency applications and related methods
Eric Desbonnets, Lumbin (FR); Ionut Radu, Crolles (FR); Oleg Kononchuk, Theys (FR); and Jean-Pierre Raskin, Louvain-la-neuve (BE)
Assigned to Soitec, Bernin (FR)
Filed by Soitec, Bernin (FR)
Filed on May 18, 2022, as Appl. No. 17/663,898.
Application 17/663,898 is a continuation of application No. 17/109,978, filed on Dec. 2, 2020, granted, now 11,367,650.
Application 17/109,978 is a continuation of application No. 16/308,602, granted, now 10,943,815, issued on Mar. 9, 2021, previously published as PCT/FR2017/051418, filed on Jun. 6, 2017.
Claims priority of application No. 1655266 (FR), filed on Jun. 8, 2016.
Prior Publication US 2022/0277988 A1, Sep. 1, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01)
CPC H01L 21/76283 (2013.01) [H01L 21/02002 (2013.01); H01L 21/76224 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 27/1218 (2013.01); H01L 29/0649 (2013.01); H01L 29/78603 (2013.01); H01L 21/76264 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A substrate for microelectronic radiofrequency devices comprising:
a support substrate comprising a first semiconductor material having a resistivity greater than 500 ohms·cm;
a plurality of trenches in a region of the support substrate filled with a second material and defining a plurality of first zones on a first side of the first semiconductor material and at least one second zone of a second material, the second material having a resistivity greater than 10 kohms·cm, the plurality of first zones having a maximum lateral dimension of less than 10 microns, the plurality of first zones being isolated from one another by the at least one second zone;
a useful layer comprising a material selected from a group consisting of a semiconductor material, a conductive material, or a piezoelectric material located above an upper surface of the support substrate along a lateral extent of the region of the support substrate, the material of the useful layer comprising a continuous portion in two lateral directions and located above each trench of the plurality of trenches; and
an insulating layer located directly between the support substrate and the useful layer in locations above the plurality of trenches, the insulating layer directly on the first semiconductor material and the second material along the lateral extent of the region of the support substrate.