US 11,923,236 B2
Silicon-on-insulator with crystalline silicon oxide
Pekka Laukkanen, Turku (FI); Mikhail Kuzmin, St. Petersburg (RU); Jaakko Mäkelä, Turku (FI); Marjukka Tuominen, Raisio (FI); Marko Punkkinen, Turku (FI); Antti Lahti, Turku (FI); Kalevi Kokko, Turku (FI); and Juha-Pekka Lehtiö, Turku (FI)
Assigned to TURUN YLIOPISTO, Turku (FI)
Filed by Turun yliopisto, Turku (FI)
Filed on Sep. 12, 2022, as Appl. No. 17/931,445.
Application 17/931,445 is a continuation of application No. 16/611,413, granted, now 11,443,977, previously published as PCT/FI2018/050409, filed on May 30, 2018.
Claims priority of application No. 20175587 (FI), filed on Jun. 21, 2017.
Prior Publication US 2023/0005786 A1, Jan. 5, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/76 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 23/31 (2006.01)
CPC H01L 21/7624 (2013.01) [H01L 21/02238 (2013.01); H01L 21/02255 (2013.01); H01L 23/3171 (2013.01); H01L 21/02164 (2013.01); H01L 21/02172 (2013.01); H01L 21/02271 (2013.01); H01L 21/0228 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising a silicon-on-insulator layer structure with crystalline silicon oxide as the insulator material, comprising:
a crystalline silicon base layer;
a crystalline silicon oxide layer, with a thickness of at least two molecular layers, on the crystalline silicon base layer at a first interface; and
a crystalline silicon top layer on the crystalline silicon oxide layer at a second interface, wherein the first interface and the second interface are graded with oxygen.