| CPC H01L 21/67109 (2013.01) [F27B 17/0025 (2013.01); F27B 17/0083 (2013.01); F27D 5/0037 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); H01L 21/0273 (2013.01); H01L 21/31058 (2013.01); H01L 21/67253 (2013.01); H01L 22/26 (2013.01); H05B 3/22 (2013.01)] | 7 Claims |
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1. An apparatus for treating a substrate, the apparatus comprising:
a process chamber having a process space inside;
a support unit configured to support the substrate in the process space;
a heating unit inside the support unit and configured to heat the substrate;
an exhaust unit configured to evacuate the process space;
a gas supply unit configured to supply a gas into the process space; and
a controller,
wherein the gas supply unit includes a first supply unit and a second supply unit, and the gas supply unit is configured to supply the gas having a temperature determined based on a thickness of a liquid film on the substrate in the process space,
wherein the first supply unit includes a first supply tube configured to directly supply the gas at a first temperature into the process space,
wherein the second supply unit includes,
a second supply tube configured to supply the gas,
a buffer space being above the support unit and configured to receive the gas through the second supply tube,
a heater configured to heat the gas in the buffer space,
a dispensing space vertically between the buffer space and the support unit and fluidically connected to the buffer space, the dispensing space configured to receive the heated gas from the buffer space, and provide the heated gas as the gas of a second temperature to the process space, and
a partitioning plate configured to partition an interior space of the second supply unit into the buffer space and the dispensing space,
wherein the controller is configured to control the first and second supply units based on the thickness of the liquid film on the substrate in the process space,
wherein the partitioning plate is spaced apart from an upper body of the process chamber,
wherein the exhaust unit includes a plurality of exhaust holes, and
wherein the least one exhaust hole of the plurality of exhaust holes is arranged in the upper body of the process chamber and is upwardly spaced apart from the partitioning plate.
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