US 11,923,207 B2
Redistribution structures for semiconductor packages and methods of forming the same
Yu-Hsiang Hu, Hsinchu (TW); Hung-Jui Kuo, Hsinchu (TW); and Chen-Hua Yu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 28, 2023, as Appl. No. 18/308,909.
Application 18/308,909 is a continuation of application No. 17/364,207, filed on Jun. 30, 2021, granted, now 11,670,519.
Application 17/364,207 is a continuation of application No. 16/058,692, filed on Aug. 8, 2018, granted, now 11,062,915, issued on Jul. 13, 2021.
Claims priority of provisional application 62/650,006, filed on Mar. 29, 2018.
Prior Publication US 2023/0268196 A1, Aug. 24, 2023
Int. Cl. H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/49 (2006.01); H01L 23/498 (2006.01)
CPC H01L 21/4857 (2013.01) [H01L 21/4853 (2013.01); H01L 21/486 (2013.01); H01L 21/561 (2013.01); H01L 21/6835 (2013.01); H01L 23/49822 (2013.01); H01L 24/13 (2013.01); H01L 21/568 (2013.01); H01L 2221/68331 (2013.01); H01L 2224/10122 (2013.01); H01L 2924/19106 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
attaching a semiconductor die to a carrier;
encapsulating the semiconductor die in a molding compound;
depositing a photo-sensitive material over the semiconductor die and the molding compound;
patterning the photo-sensitive material, wherein patterning the photo-sensitive material comprises:
exposing the photo-sensitive material to a patterned energy source using an photomask, wherein an outer perimeter the photomask is at least as large as an outer perimeter of the carrier, and wherein an entirety of a top surface of the photo-sensitive material is exposed to the patterned energy source simultaneously; and
after exposing the photo-sensitive material, developing the photo-sensitive material to define a plurality of openings through the photo-sensitive material; and
plating a metallization pattern in the plurality of openings.