US 11,923,198 B2
Resistless patterning mask
Mikhail Krishtab, Heverlee (BE); and Silvia Armini, Heverlee (BE)
Assigned to IMEC VZW, Leuven (BE); and Katholieke Universiteit Leuven, KU LEUVEN R&D, Leuven (BE)
Filed by IMEC VZW, Leuven (BE); and Katholieke Universiteit Leuven, KU LEUVEN R&D, Leuven (BE)
Filed on Apr. 12, 2021, as Appl. No. 17/228,295.
Claims priority of application No. 20177913 (EP), filed on Jun. 2, 2020.
Prior Publication US 2021/0375615 A1, Dec. 2, 2021
Int. Cl. H01L 21/027 (2006.01)
CPC H01L 21/0273 (2013.01) 13 Claims
OG exemplary drawing
 
1. A method for forming a patterning mask over a layer to be patterned, the method comprising:
providing a first layer over a substrate, the substrate comprising the layer to be patterned;
bonding a functional group of a monolayer to the first layer, the monolayer further including a removable organic group;
exposing the monolayer to an energy beam, thereby forming a pattern of a first area that includes the removable organic group and a second area that does not include the removable organic group; and
selectively depositing an amorphous carbon layer on the first area.