US 11,923,193 B2
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
Kimihiko Nakatani, Toyama (JP); and Motomu Degai, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Feb. 25, 2021, as Appl. No. 17/185,320.
Claims priority of application No. 2020-032129 (JP), filed on Feb. 27, 2020.
Prior Publication US 2021/0272803 A1, Sep. 2, 2021
Int. Cl. H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01)
CPC H01L 21/02312 (2013.01) [H01L 21/02126 (2013.01); H01L 21/02211 (2013.01); H01L 21/30604 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
(a) modifying a surface of a first base by supplying a modifying gas to the substrate including the first base and a second base on a surface of the substrate, the modifying gas including a silicon-containing gas and a first fluorine-containing gas;
(b) forming a first film on a surface of the second base by supplying a first film-forming gas to the substrate after performing (a);
(c) etching a first film formed on the surface of the first base- and remodifying the surface of the first base by supplying a second fluorine-containing gas to the substrate after the first film is formed on the surface of the first base after performing (b); and
(d) forming a second film on the first film formed on the surface of the second base by supplying a second film-forming gas to the substrate after performing (c),
wherein in (a), the silicon-containing gas is supplied before the first fluorine-containing gas is supplied.