US 11,923,191 B2
Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium
Shoma Miyata, Toyoma (JP); Kimihiko Nakatani, Toyoma (JP); Takayuki Waseda, Toyoma (JP); Takashi Nakagawa, Toyoma (JP); and Motomu Degai, Toyoma (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Sep. 16, 2021, as Appl. No. 17/477,200.
Claims priority of application No. 2020-163759 (JP), filed on Sep. 29, 2020.
Prior Publication US 2022/0102137 A1, Mar. 31, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H01L 21/285 (2006.01)
CPC H01L 21/0228 (2013.01) [C23C 16/042 (2013.01); C23C 16/45529 (2013.01); C23C 16/52 (2013.01); H01J 37/32449 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/28562 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
(a) modifying a surface of a first base of a substrate by supplying a first modifier and a second modifier to the substrate having a surface on which the first base and a second base are exposed, wherein the first modifier contains one or more atoms to which at least one first functional group and at least one second functional group are directly bonded, wherein the second modifier contains an atom to which at least one first functional group and at least one second functional group are directly bonded, and wherein the number of the at least one first functional group contained in one molecule of the second modifier is smaller than the number of the at least one first functional group contained in one molecule of the first modifier; and
(b) forming a film on a surface of the second base by supplying a film-forming gas to the substrate after modifying the surface of the first base.