US 11,923,188 B2
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
Takeo Hanashima, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Sep. 18, 2020, as Appl. No. 17/025,388.
Application 17/025,388 is a continuation of application No. PCT/JP2018/016619, filed on Apr. 24, 2018.
Prior Publication US 2021/0005447 A1, Jan. 7, 2021
Int. Cl. H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/02123 (2013.01) [C23C 16/455 (2013.01); C23C 16/4584 (2013.01); H01L 21/67161 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
providing a substrate in a process chamber; and
forming a film on the substrate in the process chamber by supplying an inert gas from a first supplier, supplying a first processing gas from a second supplier, supplying an inert gas from a third supplier and supplying a second processing gas from a fourth supplier to the substrate,
wherein the third supplier is installed at an opposite side of the first supplier with respect to a straight line that passes through the second supplier and a center of the substrate, the straight line being interposed between the first supplier and the third supplier, and the first supplier and the third supplier being disposed in line symmetry with the straight line as a symmetry axis, wherein the first supplier, the second supplier and the third supplier are parallel to each other, and
wherein in the forming a film, a substrate in-plane film thickness distribution of the film is adjusted by controlling a balance between a flow rate of the inert gas supplied from the first supplier and a flow rate of the inert gas supplied from the third supplier.