CPC H01J 37/32183 (2013.01) [H01J 37/3299 (2013.01); H01L 21/67069 (2013.01); H01L 21/67253 (2013.01); H01L 22/20 (2013.01)] | 13 Claims |
1. A plasma processing system comprising:
a plasma processing apparatus configured to perform a plasma processing on a substrate and including:
a processing container configured to accommodate the substrate;
a power supply configured to supply a radio-frequency power into the processing container through a conductor; and
a matching box including a variable capacitor connected between the conductor and the power supply and another variable capacitor connected between the power supply and a ground potential, and
a controller configured to control the plasma processing apparatus, wherein the controller is further configured to:
collect a measurement value indicating a matching state of impedance between the power supply that supplies the radio-frequency power to the plasma and the plasma, with respect to each value of a variable that is adjustable related to matching of the impedance;
specify as a passing point, a point corresponding to a value of the variable that maximizes a gradient of change of the measurement value with respect to a vector extending from a point corresponding to the variable to a matching point corresponding to a measurement value in a state where the impedance is matched;
specify as a control start point, a point farther from the matching point than the passing point on a straight line including the passing point and the matching point;
ignite the plasma in the plasma processing apparatus by controlling the variable such that the measurement value changes from the control start point toward the matching point and from a direction in which the gradient of change of the measurement value is relatively steep toward a direction in which the gradient of change of the measurement value is relatively gentle, along the straight line.
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