CPC H01J 37/321 (2013.01) [H01J 37/32128 (2013.01); H01J 37/32183 (2013.01)] | 20 Claims |
1. A substrate processing apparatus comprising:
a process chamber comprising:
a plasma generation space capable of generating a plasma; and
a substrate processing space capable of processing a substrate;
a gas supplier capable of supplying a gas into the plasma generation space;
a first coil provided to surround the plasma generation space and configured to generate a first voltage distribution; and
a second coil provided to surround the plasma generation space and configured to generate a second voltage distribution such that a peak of the second voltage distribution does not overlap with a peak of the first voltage distribution.
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18. A substrate processing method, comprising:
(a) generating a first voltage distribution by a first coil provided to surround a plasma generation space and generating a second voltage distribution by a second coil provided to surround the plasma generation space, wherein a peak of the second voltage distribution does not overlap with a peak of the first voltage distribution; and
(b) generating a plasma by supplying a gas into the plasma generation space of a process chamber provided with the plasma generation space and a substrate processing space, and processing a substrate accommodated in the substrate processing space.
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