US 11,923,170 B2
Plasma processing apparatus and plasma processing method
Satoru Kawakami, Nirasaki (JP); Hiroyuki Yamamoto, Nirasaki (JP); Taro Ikeda, Nirasaki (JP); and Masaki Hirayama, Tokyo (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Appl. No. 17/311,183
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP); and TOHOKU UNIVERSITY, Miyagi (JP)
PCT Filed Nov. 26, 2019, PCT No. PCT/JP2019/046225
§ 371(c)(1), (2) Date Jun. 4, 2021,
PCT Pub. No. WO2020/116251, PCT Pub. Date Jun. 11, 2020.
Claims priority of application No. 2018-229224 (JP), filed on Dec. 6, 2018.
Prior Publication US 2022/0037118 A1, Feb. 3, 2022
Int. Cl. C23F 1/08 (2006.01); H01J 37/32 (2006.01)
CPC H01J 37/32082 (2013.01) [H01J 37/32449 (2013.01); H01J 37/32559 (2013.01); H01J 37/32568 (2013.01); H01J 37/32577 (2013.01); H01J 37/32651 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A plasma processing apparatus, comprising:
a processing container;
a stage;
an upper electrode;
a dielectric plate; and
a waveguide,
wherein the stage is provided in the processing container,
the dielectric plate is provided above the stage with a space in the processing container interposed therebetween,
the upper electrode is provided above the dielectric plate,
the waveguide has an end and guides high frequency waves in a VHF band or a UHF band,
the end is arranged to face the space to radiate the high frequency waves to the space,
the dielectric plate includes a conductive film,
the conductive film is provided on an upper surface of the dielectric plate,
the upper surface faces the upper electrode, and
the conductive film is electrically connected to the upper electrode.