US 11,923,033 B2
Semiconductor device
Jae Taek Kim, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on May 5, 2022, as Appl. No. 17/737,294.
Claims priority of application No. 10-2022-0031881 (KR), filed on Mar. 15, 2022.
Prior Publication US 2023/0298632 A1, Sep. 21, 2023
Int. Cl. G11C 5/02 (2006.01); H10B 63/00 (2023.01)
CPC G11C 5/025 (2013.01) [H10B 63/84 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first memory block having a first block pitch, wherein the first memory block includes a first stack and a first channel structure extending through the first stack; and
a second memory block belonging to a same plane as the first memory block, the second memory block located closer to a plane edge than the first memory block, the plane edge being an edge of the plane, wherein the second memory block includes a second stack and a second channel structure extending through the second stack,
wherein the second memory block has a second block pitch that is larger than the first block pitch.