US 11,923,030 B2
Optimized storage charge loss management
Gary F. Besinga, Boise, ID (US); Renato C. Padilla, Folsom, CA (US); Tawalin Opastrakoon, Boise, ID (US); Sampath K. Ratnam, San Jose, CA (US); Michael G. Miller, Boise, ID (US); Christopher M. Smitchger, Boise, ID (US); Vamsi Pavan Rayaprolu, Santa Clara, CA (US); and Ashutosh Malshe, Fremont, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 16, 2022, as Appl. No. 17/888,641.
Application 17/888,641 is a continuation of application No. 17/212,531, filed on Mar. 25, 2021, granted, now 11,456,051.
Prior Publication US 2022/0392561 A1, Dec. 8, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 29/44 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 29/00 (2006.01); G11C 29/42 (2006.01); G11C 29/50 (2006.01)
CPC G11C 29/44 (2013.01) [G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 29/42 (2013.01); G11C 29/50004 (2013.01); G11C 29/783 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a memory device;
a processing device operatively coupled with the memory device; and
a memory operatively coupled with the processing device and storing instructions that, when executed by the processing device, cause the processing device to perform operations comprising:
initiating a read operation with respect to a block of the memory device;
selecting, based on a set of criteria, a default read offset from a set of read offsets, wherein the set of criteria comprises at least one of: a parameter related to trigger rate, or an amount of time that an open block is allowed to remain open to control threshold voltage shift due to storage charge loss; and
applying the default read offset to perform the read operation.