US 11,923,025 B2
Generation of programming parameters for non-volatile memory device based on physical device parameters
Avi Steiner, Kiriat Motzkin (IL); Hanan Weingarten, Herzliya (IL); Yasuhiko Kurosawa, Tokyo (JP); and Neil Buxton, Reading (GB)
Assigned to KIOXIA CORPORATION, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Dec. 22, 2020, as Appl. No. 17/131,509.
Prior Publication US 2022/0199183 A1, Jun. 23, 2022
Int. Cl. G11C 29/42 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 29/44 (2006.01)
CPC G11C 29/42 (2013.01) [G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 29/44 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
determining at least a target row and a target block corresponding to a program command;
setting row-based programming parameters for the target row and the target block using target physical device parameters for the target row and the target block and optimized programming parameters corresponding to the target physical device parameters; and
activating, in response to the program command, a programming operation of data for the target row and the target block of the program command by setting trim parameters of a program DSP with the row-based programming parameters, wherein for a first target row and target block, the trim parameters of the program DSP for programming the data are set with a first set of row-based programming parameters, and wherein for a second different target row and target block, the trim parameters of the program DSP for programming the data are set with a second set of row-based programming parameters that is different from the first set of row-based programming parameters.