US 11,923,011 B2
Storage device and the read operating method thereof
Jun-Ho Seo, Hwaseong-si (KR); Suk-Eun Kang, Seoul (KR); Do Gyeong Lee, Suwon-si (KR); and Ju Won Lee, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 10, 2022, as Appl. No. 17/837,975.
Application 17/837,975 is a continuation of application No. 17/182,556, filed on Feb. 23, 2021, granted, now 11,380,398.
Claims priority of application No. 10-2020-0088807 (KR), filed on Jul. 17, 2020.
Prior Publication US 2022/0301629 A1, Sep. 22, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/28 (2006.01); G11C 16/30 (2006.01)
CPC G11C 16/10 (2013.01) [G11C 16/08 (2013.01); G11C 16/28 (2013.01); G11C 16/30 (2013.01); G11C 16/3404 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A read operating method of a storage device, the read operating method comprising:
receiving, by a counter, a read command for a first memory cell from among the first memory cell and a second memory cell stacked sequentially in a first direction in a nonvolatile memory device, the first memory cell connected to a first word line and the second memory cell connected to a second word line;
calculating, by the counter, an off-cell count value of memory cells connected to the second word line;
receiving, by a comparator, a first reference count value from among reference count values stored in an OTP memory cell array;
comparing, by the comparator, the off-cell count value with the first reference count value to determine a threshold voltage shift of the second memory cell; and
determining, by the comparator, a read level of the first memory cell based on the threshold voltage shift.