US 11,922,274 B1
Quantum dot devices with side and center screening gates
Hubert C. George, Portland, OR (US); James S. Clarke, Portland, OR (US); Ravi Pillarisetty, Portland, OR (US); Brennen Karl Mueller, Portland, OR (US); Stephanie A. Bojarski, Beaverton, OR (US); Eric M. Henry, Forest Grove, OR (US); Roza Kotlyar, Portland, OR (US); Thomas Francis Watson, Portland, OR (US); Lester Lampert, Portland, OR (US); and Samuel Frederick Neyens, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on May 18, 2021, as Appl. No. 17/323,487.
Int. Cl. G06N 10/00 (2022.01); H01L 29/775 (2006.01); H01L 29/12 (2006.01); H01L 27/088 (2006.01)
CPC G06N 10/00 (2019.01) [H01L 27/088 (2013.01); H01L 29/122 (2013.01); H01L 29/775 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A quantum dot device, comprising:
a quantum well stack structure comprising a quantum well stack that includes a quantum dot formation region;
a plurality of gates extending to the quantum dot formation region, wherein the plurality of gates includes a first gate coupled to a first doped region, a second gate coupled to a second doped region, and a third gate coupled to a third doped region, the third gate being between the first gate and the second gate; and
an insulating material over the quantum well stack, the insulating material comprising a first trench extending toward the quantum well stack and a second trench extending toward the quantum well stack, wherein the second trench intersects the first trench, and wherein a gate metal of the third gate has a first portion that is at least partially in the first trench and has a second portion that is at least partially in the second trench.