US 11,921,664 B2
Storage device and retraining method thereof
Tongsung Kim, Seongnam-si (KR); Jangwoo Lee, Seongnam-si (KR); Seonkyoo Lee, Hwaseong-si (KR); Chiweon Yoon, Seoul (KR); and Jeongdon Ihm, Seongnam-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 8, 2022, as Appl. No. 18/077,406.
Application 18/077,406 is a continuation of application No. 17/030,635, filed on Sep. 24, 2020, granted, now 11,550,498.
Claims priority of application No. 10-2020-0053797 (KR), filed on May 6, 2020.
Prior Publication US 2023/0105222 A1, Apr. 6, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01); G06F 13/40 (2006.01); G06F 18/214 (2023.01)
CPC G06F 13/4072 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0658 (2013.01); G06F 3/0679 (2013.01); G06F 18/214 (2023.01)] 20 Claims
OG exemplary drawing
 
1. A storage device comprising:
first non-volatile memory devices;
second non-volatile memory devices;
a buffer chip configured to connect to the first non-volatile memory devices through a first internal channel and to connect to the second non-volatile memory devices through a second internal channel; and
a controller configured to connect to the buffer chip through a channel,
wherein the buffer chip includes:
a channel selector configured to select one of the first internal channel and the second internal channel in response to a selection signal and to connect the selected internal channel to the channel;
a chip enable signal decoder configured to receive at least one chip enable signal and to generate the selection signal; and
a test circuit configured to check whether retraining of unselected internal channel excluding the selected internal channel is required while the selected internal channel is used for an execution of a normal operation and to transmit information on whether the retraining is required to the controller.