US 11,921,533 B2
Low-voltage collector-free bandgap voltage generator device
Anurag Kaplish, San Jose, CA (US)
Assigned to Renesas Electronics America Inc., Milpitas, CA (US)
Filed by Renesas Electronics America Inc., Milpitas, CA (US)
Filed on Mar. 31, 2023, as Appl. No. 18/194,096.
Application 18/194,096 is a division of application No. 17/006,541, filed on Aug. 28, 2020.
Claims priority of provisional application 62/895,365, filed on Sep. 3, 2019.
Prior Publication US 2023/0244261 A1, Aug. 3, 2023
Int. Cl. G05F 3/22 (2006.01); G05F 3/26 (2006.01); G05F 3/30 (2006.01); H01L 29/732 (2006.01)
CPC G05F 3/225 (2013.01) [G05F 3/265 (2013.01); H01L 29/732 (2013.01); G05F 3/30 (2013.01); H01L 29/7322 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A bandgap voltage device comprising:
a first current source operatively coupled to a bandgap input node and a bandgap output node, and operable to output a first proportional-to-absolute-temperature (PTAT) current;
a current mirror including a first bandgap transistor and a second bandgap transistor, and operatively coupled to the bandgap output node; and
a second current source operatively coupled to the current mirror, and operable to output a second PTAT current,
wherein the first bandgap, transistor and the second bandgap transistor each comprise a bipolar junction transistor, and
wherein the bipolar junction transistor comprises a first P+ layer proximate to a center of a planar surface of the transistor device.