US 11,920,982 B2
Image sensor and method of operating
Radwanul Hasan Siddique, Pasadena, CA (US); Daniel Assumpcao, Issaquah, WA (US); Hyuck Choo, Yongin-Si (KR); and Hyochul Kim, Yongin-si (KR)
Assigned to Samsung Electronics Co., Ltd., Yongin-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 17, 2022, as Appl. No. 17/989,605.
Application 17/989,605 is a continuation of application No. 16/914,256, filed on Jun. 26, 2020, granted, now 11,536,607.
Claims priority of provisional application 62/962,926, filed on Jan. 17, 2020.
Prior Publication US 2023/0099112 A1, Mar. 30, 2023
Int. Cl. G01J 3/18 (2006.01); G01J 3/02 (2006.01); G01J 3/28 (2006.01); G01J 3/44 (2006.01)
CPC G01J 3/2823 (2013.01) [G01J 3/0208 (2013.01); G01J 3/0229 (2013.01); G01J 3/18 (2013.01); G01J 3/4412 (2013.01)] 21 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
an aperture;
a dispersion array;
a lens;
an image sensor; and
a processor,
wherein, the dispersion array further comprises a first dispersion structure including a scattering layer and a dispersion layer, wherein the scattering layer includes a first row of nanostructures for scattering light of a first wavelength range, and the dispersion layer is configured to disperse light of a second wavelength range,
wherein the first row of nanostructures is positioned at a first angle different from a second angle of a second row of nanostructures associated with a second dispersion structure of the dispersion array.