US 11,919,125 B2
Carrier wafers and methods of forming carrier wafers
Lance Changyong Kim, Corning, NY (US); Fei Lu, Shanghai (CN); Xu Ouyang, Painted Post, NY (US); and Yeguang Pan, Camas, WA (US)
Assigned to Corning Incorporated, Corning, NY (US)
Filed by CORNING INCORPORATED, Corning, NY (US)
Filed on Sep. 26, 2019, as Appl. No. 16/583,696.
Claims priority of application No. 201811147777.5 (CN), filed on Sep. 29, 2018.
Prior Publication US 2020/0101577 A1, Apr. 2, 2020
Int. Cl. B24B 37/30 (2012.01); B24B 37/20 (2012.01); H01L 21/683 (2006.01)
CPC B24B 37/30 (2013.01) [B24B 37/20 (2013.01); H01L 21/6835 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of forming a carrier wafer, the method comprising the steps of:
lapping a first surface and a second surface of the carrier wafer such that the carrier wafer is substantially flat,
the carrier wafer comprising a glass, glass-ceramic or ceramic material, and
the carrier wafer having a diameter from 250 mm to 450 mm and a thickness from 0.5 mm to 2 mm after lapping; and
polishing the first surface of the carrier wafer with at least one of a differential pressure, a differential speed, or a differential time between a center portion and an edge portion of the carrier wafer such that the first surface has a convex or concave shape,
wherein a total thickness variation across the first surface is from 1 μm to 5 μm after the step of polishing the first surface of the carrier wafer is performed.