US RE50,331 E1
Magnetoresistive stack and method of fabricating same
Renu Whig, Chandler, AZ (US); Jijun Sun, Chandler, AZ (US); Nicholas Rizzo, Gilbert, AZ (US); Jon Slaughter, Slingerlands, NY (US); Dimitri Houssameddine, Latham, NY (US); and Frederick Mancoff, Chandler, AZ (US)
Assigned to Everspin Technologies, Inc., Chandler, AZ (US)
Filed by Everspin Technologies, Inc., Chandler, AZ (US)
Filed on Apr. 8, 2022, as Appl. No. 17/658,470.
Application 15/400,889 is a division of application No. 14/860,657, filed on Sep. 21, 2015, granted, now 9,553,258, issued on Jan. 24, 2017.
Application 14/219,532 is a division of application No. 13/158,171, filed on Jun. 10, 2011, granted, now 8,686,484, issued on Apr. 1, 2014.
Application 17/658,470 is a continuation of application No. 16/230,031, filed on Dec. 21, 2018, granted, now 10,347,828, issued on Jul. 9, 2019.
Application 16/230,031 is a continuation of application No. 15/941,153, filed on Mar. 30, 2018, granted, now 10,199,574, issued on Feb. 5, 2019.
Application 15/941,153 is a continuation of application No. 15/400,889, filed on Jan. 6, 2017, granted, now 9,947,865, issued on Apr. 17, 2018.
Application 14/860,657 is a continuation of application No. 14/219,532, filed on Mar. 19, 2014, granted, now 9,159,906, issued on Oct. 13, 2015.
Application 17/658,470 is a reissue of application No. 16/419,165, filed on May 22, 2019, granted, now 10,622,554, issued on Apr. 14, 2020.
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 50/01 (2023.01); G11C 11/16 (2006.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/01 (2023.02) [G11C 11/161 (2013.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 44 Claims
OG exemplary drawing
 
1. A magnetoresistive device, comprising:
a free magnetic layer having a first side and a second side;
a first electrode positioned on the first side of the free magnetic layer;
a second electrode positioned on the second side of the free magnetic layer;
a first dielectric layer in contact with the first electrode and the first side of the free magnetic layer; and
a second dielectric layer in contact with the second electrode and the second side of the free magnetic layer;
wherein an interface region of the free magnetic region on the second side has a higher iron content than an interface region of the free magnetic layer on the first side.