CPC H10N 50/01 (2023.02) [G11C 11/161 (2013.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] | 44 Claims |
1. A magnetoresistive device, comprising:
a free magnetic layer having a first side and a second side;
a first electrode positioned on the first side of the free magnetic layer;
a second electrode positioned on the second side of the free magnetic layer;
a first dielectric layer in contact with the first electrode and the first side of the free magnetic layer; and
a second dielectric layer in contact with the second electrode and the second side of the free magnetic layer;
wherein an interface region of the free magnetic region on the second side has a higher iron content than an interface region of the free magnetic layer on the first side.
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