US 12,245,528 B2
Memory device with composite spacer
Fu-Ting Sung, Taoyuan (TW); Chern-Yow Hsu, Hsinchu County (TW); and Shih-Chang Liu, Kaohsiung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jul. 31, 2023, as Appl. No. 18/362,781.
Application 15/783,030 is a division of application No. 14/740,101, filed on Jun. 15, 2015, granted, now 9,806,254, issued on Oct. 31, 2017.
Application 18/362,781 is a continuation of application No. 17/572,599, filed on Jan. 10, 2022, granted, now 11,800,822.
Application 17/572,599 is a continuation of application No. 16/715,868, filed on Dec. 16, 2019, granted, now 11,227,993, issued on Jan. 18, 2022.
Application 16/715,868 is a continuation of application No. 15/783,030, filed on Oct. 13, 2017, granted, now 10,510,952, issued on Dec. 17, 2019.
Prior Publication US 2023/0380306 A1, Nov. 23, 2023
Int. Cl. H10N 70/20 (2023.01); H10N 50/01 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/24 (2023.02) [H10N 50/01 (2023.02); H10N 70/011 (2023.02); H10N 70/063 (2023.02); H10N 70/20 (2023.02); H10N 70/801 (2023.02); H10N 70/826 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a first metal structure;
a magnetic tunneling junction (MTJ) structure over the first metal structure;
a second metal structure over the MTJ structure;
a first spacer over a first sidewall of the second metal structure;
a second spacer over a second sidewall of the second metal structure, the second spacer having a top surface higher than a top surface of the first spacer; and
a third metal structure over the second metal structure and the first spacer, wherein the third metal structure forms a first interface with the first spacer and a second interface with the second metal structure, wherein the first interface and the second interface extend in different directions in a cross-sectional view, and wherein a bottommost position of the first interface formed by the third metal structure and the first spacer is higher than a top surface of the MTJ structure.