US 12,245,525 B2
Electronic device and method for fabricating the same
So Young Yim, Icheon (KR); Jeong Soo Kim, Icheon (KR); and Geun Hyeok Jang, Icheon (KR)
Assigned to SK hynix Inc., Icheon (KR)
Filed by SK hynix Inc., Icheon (KR)
Filed on Dec. 3, 2021, as Appl. No. 17/542,177.
Claims priority of application No. 10-2021-0076570 (KR), filed on Jun. 14, 2021.
Prior Publication US 2022/0399498 A1, Dec. 15, 2022
Int. Cl. H10N 70/00 (2023.01); G06F 3/06 (2006.01); G11C 13/00 (2006.01); H10B 63/10 (2023.01)
CPC H10N 70/011 (2023.02) [G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G11C 13/0002 (2013.01); H10N 70/801 (2023.02); H10B 63/10 (2023.02)] 29 Claims
OG exemplary drawing
 
1. An electronic device comprising a semiconductor memory, the semiconductor memory comprising:
a memory cell;
a protective layer disposed along a profile of the memory cell; and
a buffer layer interposed between at least a portion of a sidewall of the memory cell and the protective layer,
wherein the memory cell includes a variable resistance layer,
wherein the buffer layer is disposed without covering a sidewall of the variable resistance layer,
wherein the sidewall of the variable resistance layer is in direct contact with the protective layer, and
wherein a density of the protective layer is greater than a density of the buffer layer.