US 12,245,521 B2
Magnetic memory and manufacturing method thereof
Chih-Wei Kuo, Tainan (TW); Chung Yi Chiu, Tainan (TW); Yi-Wei Tseng, New Taipei (TW); Hsuan-Hsu Chen, Tainan (TW); and Chun-Lung Chen, Tainan (TW)
Assigned to United Microelectronics Corp., Hsinchu (TW)
Filed by United Microelectronics Corp., Hsinchu (TW)
Filed on Aug. 10, 2022, as Appl. No. 17/885,521.
Claims priority of application No. 111125798 (TW), filed on Jul. 8, 2022.
Prior Publication US 2024/0016067 A1, Jan. 11, 2024
Int. Cl. H10N 52/80 (2023.01); H10B 61/00 (2023.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01)
CPC H10N 52/80 (2023.02) [H10B 61/00 (2023.02); H10N 52/00 (2023.02); H10N 52/01 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetic memory, comprising:
a substrate;
a spin-orbit torque (SOT) layer located over the substrate;
a magnetic tunnel junction (MTJ) stack located on the SOT layer; and
a first protection layer and a second protection layer located on a sidewall of the MTJ stack, wherein
the first protection layer is located between the second protection layer and the MTJ stack,
there is a notch between the second protection layer and the SOT layer, and
a top of the notch is higher than a bottom of the MTJ stack.