US 12,245,520 B2
Hall effect sensor with low offset and high level of stability
David Daughton, Worthington, OH (US); Patrick Gleeson, Pataskala, OH (US); Bo-Kuai Lai, Dublin, OH (US); and Daniel Hoy, Columbus, OH (US)
Assigned to Lake Shore Cryotronics, Inc., Westerville, OH (US)
Filed by Lake Shore Cryotronics, Inc., Westerville, OH (US)
Filed on Nov. 21, 2023, as Appl. No. 18/515,619.
Application 18/515,619 is a continuation of application No. 18/173,874, filed on Feb. 24, 2023, granted, now 11,864,470.
Application 18/173,874 is a continuation of application No. 16/784,950, filed on Feb. 7, 2020, granted, now 11,605,778, issued on Mar. 14, 2023.
Claims priority of provisional application 62/802,476, filed on Feb. 7, 2019.
Prior Publication US 2024/0099159 A1, Mar. 21, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 52/00 (2023.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01); H10N 52/85 (2023.01)
CPC H10N 52/101 (2023.02) [H10N 52/01 (2023.02); H10N 52/80 (2023.02); H10N 52/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetic field sensor comprising:
a first semiconductor layer comprising a first semiconductor;
a second semiconductor layer comprising a second semiconductor exhibiting a bandgap that is greater than a bandgap of the first semiconductor;
a third semiconductor layer comprising a third semiconductor;
a covering that reduces the excitation of defect states caused by the exposure of at least one of the first semiconductor layer and the second semiconductor layer to visible or ultraviolet light.