US 12,245,518 B2
Magnetic memory device
Ung Hwan Pi, Hwaseong-si (KR); Seonggeon Park, Seongnam-si (KR); Jeong-Heon Park, Hwaseong-si (KR); and Sung Chul Lee, Osan-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 30, 2021, as Appl. No. 17/490,353.
Claims priority of application No. 10-2020-0135815 (KR), filed on Oct. 20, 2020.
Prior Publication US 2022/0123201 A1, Apr. 21, 2022
Int. Cl. H10N 50/80 (2023.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/80 (2023.02) [H01F 10/3254 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H10B 61/00 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetic memory device comprising:
a first magnetic layer extending in a first direction;
a pinned layer on the first magnetic layer; and
a second magnetic layer vertically overlapping with the pinned layer with the first magnetic layer interposed between the pinned layer and the second magnetic layer,
wherein the first magnetic layer includes, a plurality of magnetic domains arranged in the first direction, and at least one magnetic domain wall between the plurality of magnetic domains,
a magnetization direction of the second magnetic layer is substantially parallel to a top surface of the first magnetic layer, and
one or more electrodes are on a sidewall of the first magnetic layer.