| CPC H10K 30/10 (2023.02) [C09K 11/06 (2013.01); C09K 11/668 (2013.01); C09K 11/881 (2013.01); G09G 3/32 (2013.01); H04N 23/80 (2023.01); H10K 39/32 (2023.02); H10K 50/11 (2023.02); H10K 50/115 (2023.02); C09K 2211/1007 (2013.01); H10K 85/30 (2023.02); H10K 2101/10 (2023.02); H10K 2102/00 (2023.02)] | 13 Claims |

|
1. A semiconductor device comprising:
an anode;
a cathode;
a first functional layer between the anode and the cathode, the first functional layer containing a first quantum dot having a first ligand; and
a second functional layer between the first functional layer and the cathode, the second functional layer containing a second quantum dot having a second ligand different from the first ligand, the second ligand being an aromatic compound having a sulfide bond and an ester bond.
|