| CPC H10F 77/211 (2025.01) [H10F 10/142 (2025.01); H10F 10/161 (2025.01); H10F 10/19 (2025.01); H10F 71/127 (2025.01); H10F 71/137 (2025.01); H10F 77/707 (2025.01)] | 17 Claims |

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1. A method for fabricating an upright photovoltaic cell having a front side and first and second contacts arranged on the front side, the method comprising:
growing a first epitaxial layer on a substrate, thereby forming a diffused active junction on the substrate;
growing one or more additional epitaxial layers on the substrate, thereby forming one or more additional active junctions above the diffused active junction;
selectively etching an areal region of the first and one or more additional epitaxial layers, thereby forming a mesa on the substrate and exposing a substrate-contact region parallel to the areal region at a base of the mesa;
depositing contact material onto the substrate-contact region, to form the first contact, and concertedly onto a mesa-contact region of the mesa, to form the second contact; and
lifting off the contact material outside of the substrate- and mesa-contact regions, wherein etching the mesa, depositing the contact material, and lifting off the contact material provides a standoff between the mesa and the first contact.
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