US 12,245,412 B2
SRAM cell word line structure with reduced RC effects
Hidehiro Fujiwara, Hsinchu (TW); Wei-Min Chan, New Taipei (TW); Chih-Yu Lin, Taichung (TW); Yen-Huei Chen, Hsinchu County (TW); and Hung-Jen Liao, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jul. 31, 2023, as Appl. No. 18/362,786.
Application 18/362,786 is a continuation of application No. 17/320,091, filed on May 13, 2021, granted, now 11,778,802.
Application 17/320,091 is a continuation of application No. 16/562,299, filed on Sep. 5, 2019, granted, now 11,024,633, issued on Jun. 1, 2021.
Application 16/562,299 is a continuation of application No. 15/186,446, filed on Jun. 18, 2016, granted, now 10,411,019, issued on Sep. 10, 2019.
Claims priority of provisional application 62/243,896, filed on Oct. 20, 2015.
Prior Publication US 2023/0380129 A1, Nov. 23, 2023
Int. Cl. H10B 10/00 (2023.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01)
CPC H10B 10/12 (2023.02) [H01L 21/321 (2013.01); H01L 21/76838 (2013.01); H01L 23/5283 (2013.01); H01L 27/0207 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a first gate electrode corresponding to transistors of a memory cell;
a second gate electrode separated from the first gate electrode and corresponding to the transistors;
a word line coupled to the memory cell and located between the first gate electrode and the second gate electrode; and
a first metal island configured to couple a first power supply to the memory cell,
wherein, along a first direction, a first boundary of the first metal island is located between a first boundary of the first gate electrode and a second boundary of the first gate electrode and is located between a first boundary of the word line and a second boundary of the word line, and
along the first direction, each of the first boundary of the first gate electrode and the first boundary of the word line is located between the first boundary of the first metal island and a second boundary of the first metal island.