US 12,245,381 B2
Thermocompression bonding with passivated nickel-based contacting metal
Eric Frank Schulte, Santa Barbara, CA (US)
Assigned to SET NORTH AMERICA, LLC, Chester, NH (US)
Filed by SET North America, LLC, Chester, NH (US)
Filed on Oct. 30, 2020, as Appl. No. 17/085,890.
Application 17/085,890 is a continuation of application No. 13/781,927, filed on Mar. 1, 2013, granted, now 11,134,598.
Application 13/781,927 is a continuation in part of application No. 12/837,751, filed on Jul. 16, 2010, granted, now 8,567,658, issued on Oct. 29, 2013.
Claims priority of provisional application 61/606,442, filed on Mar. 4, 2012.
Claims priority of provisional application 61/227,063, filed on Jul. 20, 2009.
Prior Publication US 2021/0219475 A1, Jul. 15, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H05K 13/04 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); B32B 38/00 (2006.01)
CPC H05K 13/046 (2013.01) [H01L 24/11 (2013.01); H01L 24/81 (2013.01); H01L 25/50 (2013.01); B32B 38/0008 (2013.01); B32B 2310/14 (2013.01); B32B 2457/00 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 2224/0381 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/1181 (2013.01); H01L 2224/11831 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13105 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/1312 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/81011 (2013.01); H01L 2224/81013 (2013.01); H01L 2224/81054 (2013.01); H01L 2224/81099 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/812 (2013.01); H01L 2224/81201 (2013.01); H01L 2224/81365 (2013.01); H01L 2224/81895 (2013.01); H01L 2224/81897 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06565 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0001 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01042 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01051 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01327 (2013.01); H01L 2924/014 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1461 (2013.01)] 3 Claims
OG exemplary drawing
 
3. A method for bonding microelectronic elements, comprising:
forming a plurality of elements respectively having contacting metallizations both on a first side and also on a second side;
forming at least one one-sided element having contacting metallizations on only one side;
a) treating first contacting metallizations on a first element with plasma-activated radical-enriched gas flow at substantially ambient atmospheric conditions;
wherein said treating step reduces native oxides from said first contacting metallizations, and also inhibits oxide re-formation thereupon;
b) treating second contacting metallizations on a second element with plasma-activated radical-enriched gas flow at substantially ambient atmospheric conditions; wherein said treating step reduces native oxides from said second contacting metallizations, and also inhibits oxide re-formation thereupon;
c) aligning and compressing said first and second contacting metallizations, without any conductive liquid phase material, to thereby bond said first and second elements; and
d) repeating said step c), using additional elements which have been subjected to step a) to bond contacting metallizations on each of the additional elements to contacting metallizations on an unbonded side of a previously bonded element;
wherein said step of compressing said first and second contacting metallizations together joins one of said contacting metallizations which is of a first type together with another of said contacting metallizations which is of a second type; and
repeating said step c), to bond contacting metallizations on an element which has been subjected to step a) to contacting metallizations on a one-sided element which has been subjected to step a);
wherein contacting metallizations of said first type are made essentially of nickel; and
wherein said compressing step compresses said contacting metallizations by no more than 40% of the initial heights of said contacting metallizations.