US 12,244,950 B2
Image sensor with switchable in-pixel binning during readout
Jiaju Ma, Monrovia, CA (US); and Saleh Masoodian, Monrovia, CA (US)
Assigned to Gigajot Technology, Inc., Glendale, CA (US)
Filed by Gigajot Technology, Inc., Glendale, CA (US)
Filed on Apr. 17, 2024, as Appl. No. 18/638,493.
Application 18/638,493 is a continuation of application No. 18/190,023, filed on Mar. 24, 2023, granted, now 11,991,467.
Application 18/190,023 is a continuation of application No. 17/716,176, filed on Apr. 8, 2022, granted, now 11,632,514, issued on Apr. 18, 2023.
Application 17/716,176 is a continuation of application No. 16/871,720, filed on May 11, 2020, granted, now 11,330,218, issued on May 10, 2022.
Application 16/871,720 is a continuation in part of application No. 16/802,518, filed on Feb. 26, 2020, abandoned.
Application 16/802,518 is a continuation of application No. 16/548,251, filed on Aug. 22, 2019, granted, now 10,616,523, issued on Apr. 7, 2020.
Claims priority of provisional application 62/721,183, filed on Aug. 22, 2018.
Prior Publication US 2024/0267653 A1, Aug. 8, 2024
Int. Cl. H04N 5/335 (2011.01); H04N 25/57 (2023.01); H04N 25/75 (2023.01)
CPC H04N 25/75 (2023.01) [H04N 25/57 (2023.01)] 20 Claims
OG exemplary drawing
 
1. An integrated-circuit image sensor, comprising:
a photodetection element to accumulate a photocharge;
first and second floating diffusion nodes switchably coupled to the photodetection element via first and second transfer gates, respectively;
an in-pixel binning transistor that switchably couples the first and second floating diffusion nodes; and
readout control circuitry to:
switch on the first transfer gate to enable transfer of a first portion of the photocharge from the photodetection element to the first floating diffusion node;
switch on the second transfer gate to enable transfer of a second portion of the photocharge from the photodetection element to the second floating diffusion node;
generate a first readout value based on the first portion of the photocharge in the first floating diffusion node;
switch on the in-pixel binning transistor to create a composite floating diffusion node that combines capacitances of the first and second floating diffusion nodes; and
generate a second readout value based on the second portion of the photocharge in the composite floating diffusion node.