US 12,244,297 B2
Filters with raised frame bulk acoustic wave devices
Tomoya Komatsu, Irvine, CA (US); Yiliu Wang, Irvine, CA (US); Takashi Hayashi, Suita (JP); Hironori Sano, Osaka (JP); Rei Goto, Osaka (JP); and Kwang Jae Shin, Yongin (KR)
Assigned to Skyworks Global Pte. Ltd., Singapore (SG)
Filed by Skyworks Global Pte. Ltd., Singapore (SG)
Filed on Mar. 24, 2022, as Appl. No. 17/703,864.
Claims priority of provisional application 63/166,100, filed on Mar. 25, 2021.
Claims priority of provisional application 63/166,126, filed on Mar. 25, 2021.
Prior Publication US 2022/0311419 A1, Sep. 29, 2022
Int. Cl. H03H 9/56 (2006.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/13 (2006.01); H03H 9/205 (2006.01)
CPC H03H 9/568 (2013.01) [H03H 9/02157 (2013.01); H03H 9/0504 (2013.01); H03H 9/13 (2013.01); H03H 9/131 (2013.01); H03H 9/205 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A filter comprising:
one or more series bulk acoustic wave (BAW) resonators that include a first raised frame structure; and
one or more shunt bulk acoustic wave (BAW) resonators that have a second raised frame structure different from the first raised frame structure, the BAW resonators including a first electrode, a second electrode, and a piezoelectric layer between the first electrode and the second electrode, the first raised frame structure or the second raised frame structure including a first raised frame layer and a second raised frame layer having a higher acoustic impedance than the first raised frame layer, the second raised frame layer overlapping a portion of the first raised frame layer, and the first raised frame layer extending further inward than the second raised frame layer by a distance that is between about 50% and about 100% of a combined thickness of the first electrode, the piezoelectric layer, and the second electrode.