	US 12,244,289 B2
	Method of manufacturing integrated circuit configured with two or more single crystal acoustic resonator devices
Jeffrey B. Shealy, Davidson, NC (US)
Assigned to Akoustis, Inc., Huntersville, NC (US)
Filed by Akoustis, Inc., Huntersville, NC (US)
Filed on Oct. 5, 2022, as Appl. No. 17/938,190.
Application 17/938,190 is a division of application No. 16/239,977, filed on Jan. 4, 2019, granted, now 11,496,109.
Application 16/239,977 is a continuation of application No. 15/147,613, filed on May 5, 2016, granted, now 10,211,804, issued on Feb. 19, 2019.
Application 15/147,613 is a continuation of application No. 14/796,939, filed on Jul. 10, 2015, granted, now 9,362,887, issued on Jun. 7, 2016.
Application 14/796,939 is a continuation of application No. 14/298,100, filed on Jun. 6, 2014, granted, now 9,571,061, issued on Feb. 14, 2017.
Prior Publication US 2023/0025951 A1, Jan. 26, 2023
Int. Cl. H03H 3/08 (2006.01); H03H 3/02 (2006.01); H03H 9/00 (2006.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/17 (2006.01); H03H 9/205 (2006.01); H03H 9/54 (2006.01); H03H 9/56 (2006.01); H03H 9/60 (2006.01); H03H 9/64 (2006.01); H10N 30/06 (2023.01); H10N 30/85 (2023.01)

CPC H03H 9/02015 (2013.01) [H03H 3/02 (2013.01); H03H 3/08 (2013.01); H03H 9/0095 (2013.01); H03H 9/02574 (2013.01); H03H 9/0542 (2013.01); H03H 9/174 (2013.01); H03H 9/205 (2013.01); H03H 9/54 (2013.01); H03H 9/542 (2013.01); H03H 9/568 (2013.01); H03H 9/605 (2013.01); H03H 9/64 (2013.01); H10N 30/06 (2023.02); H10N 30/852 (2023.02); H03H 2003/023 (2013.01); H03H 2003/025 (2013.01); H03H 2003/027 (2013.01); H03H 9/175 (2013.01); Y10T 29/42 (2015.01)]

16 Claims

1. A method of fabricating a configurable monolithic filter ladder network comprising a plurality of crystalline acoustic resonator (SCAR) devices, numbered from R1 to RN, where N is an integer greater than 1, configured on a common substrate member, the method comprising:

forming a bulk substrate structure, having a surface region, and a thickness of material, the bulk substrate structure having a first recessed region and a second recessed region, and a support member disposed between the first recessed region and the second recessed region;

forming a thickness of crystalline piezo material overlying the surface region, the thickness of crystalline piezo material having an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region;

forming a first electrode member overlying an upper portion of the thickness of crystalline piezo material;

forming a second electrode member overlying a lower portion of the thickness of crystalline piezo material to sandwich the thickness of crystalline piezo material with the first electrode member and the second electrode member, the second electrode member extending from the lower portion that includes the exposed backside region to the contact region;

forming a first electrode terminal electrically coupled with the first electrode member;

forming a second electrode terminal electrically coupled to the second electrode member at the contact region; and

forming a dielectric material overlying at least the first and second electrode members and the surface region of the bulk substrate structure,

wherein the crystalline piezo material comprises a single crystal piezo material; wherein the crystalline piezo material has a thickness of greater than 0.4 microns, the crystalline piezo material being characterized by a dislocation density of less than 10¹²defects/cm².