| CPC H03F 1/0205 (2013.01) [H03F 3/245 (2013.01); H03F 2200/451 (2013.01)] | 20 Claims |
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1. A power amplifier, comprising:
an amplifying transistor configured to amplify a radio frequency (RF) signal to output an amplified RF signal, a control end of the amplifying transistor receiving the RF signal, a first end of the amplifying transistor being coupled to a first system voltage end, and a second end of the amplifying transistor being coupled to a first reference voltage end, wherein the first end of the amplifying transistor is configured to output the amplified RF signal;
a first resistor comprising a first end and a second end and configured to provide a first resistance, and the second end of the first resistor being coupled to the control end of the amplifying transistor;
a bias circuit comprising a bias transistor, and the bias circuit being coupled to the first end of the first resistor;
a second resistor comprising a first end and a second end and configured to provide a second resistance, the second resistance being less than the first resistance, and the second end of the second resistor being coupled to the control end of the amplifying transistor; and
a compensation circuit comprising a compensation transistor, and an output end of the compensation circuit being coupled to the first end of the second resistor;
wherein when power of the RF signal is a first power, the bias transistor is turned on, and the compensation transistor is turned off; and
wherein when the power of the RF signal is a second power, both the bias transistor and the compensation transistor are turned on.
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