US 12,244,247 B2
Half-bridge for an electric drive of an electric vehicle or a hybrid vehicle, power module for an inverter and inverter
Ivonne Trenz, Friedrichshafen (DE); Manuel Raimann, Salem (DE); Thomas Bosch, Horgenzell (DE); and Ruben Bärenweiler, Markdorf (DE)
Assigned to ZF Friedrichshafen AG, Friedrichshafen (DE)
Filed by ZF Friedrichshafen AG, Friedrichshafen (DE)
Filed on Nov. 8, 2021, as Appl. No. 17/521,614.
Claims priority of application No. 10 2020 214 045.6 (DE), filed on Nov. 9, 2020.
Prior Publication US 2022/0149752 A1, May 12, 2022
Int. Cl. H02M 7/5387 (2007.01); H02M 7/00 (2006.01)
CPC H02M 7/53871 (2013.01) [H02M 7/003 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for producing a half-bridge for an electric drive, the method comprising:
providing a substrate, semiconductor switch elements, power connections, and signal connections;
forming the power connections and signal connections in a flat conductor frame;
electrically connecting the signal connections to the semiconductor switch elements such that the semiconductor switch elements can be switched via the signal connections;
electrically connecting the power connections to the semiconductor switch elements such that the semiconductor switch elements allow or interrupt transfer of electricity between the power connections;
embedding the semiconductor switch elements in a modular layer system that comprises a contact plane and a metal plating for establishing contact with the semiconductor switch elements,
wherein the signal connections and power connections are located on a first surface of the substrate,
casting the modular layer system, signal connections and power connections in a casting compound,
wherein external sections of at least one of the power connections or signal connections formed in the conductor frame each extend from the casting compound from a second surface that is orthogonal to the first surface,
wherein the external sections each have an end that is perpendicular to the first surface, and
wherein the metal plating contains a first metal layer that faces away from the substrate and a second metal layer that faces toward the substrate, wherein the semiconductor switch elements are located between the first metal layer and the second metal layer, such that the semiconductor switch elements are electrically connected to the first metal layer, wherein the second metal layer is formed from a metal layer of the substrate facing the layer system, and
the method further comprising embedding the semiconductor switch elements in a printed circuit board comprising at least the first metal layer and the contact plane before the contact plane is connected to the metal layer of the substrate facing the layer system.