US 12,244,119 B2
Laser comprising a distributed Bragg mirror and production method thereof
Vincent Reboud, Grenoble (FR); Maryse Fournier, Grenoble (FR); and Jean-Marc Fedeli, Grenoble (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed on Dec. 17, 2021, as Appl. No. 17/644,870.
Claims priority of application No. 20 13657 (FR), filed on Dec. 18, 2020.
Prior Publication US 2022/0200239 A1, Jun. 23, 2022
Int. Cl. H01S 5/125 (2006.01); H01S 5/042 (2006.01); H01S 5/10 (2021.01); H01S 5/34 (2006.01)
CPC H01S 5/125 (2013.01) [H01S 5/04254 (2019.08); H01S 5/04256 (2019.08); H01S 5/1003 (2013.01); H01S 5/3402 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A laser comprising a distributed Bragg mirror,
said laser being configured to emit light radiation along a longitudinal direction and comprising a waveguide formed at least in part in a stack of layers made of III-V materials, said waveguide comprising at least one active region configured to emit said light radiation, said stack having a top surface, the at least one active region being located at a depth ha measured along a first transverse direction perpendicular to the longitudinal direction and from the top surface, and
said Bragg mirror comprising lateral corrugations distributed periodically along a longitudinal direction in a period A, said lateral corrugations being carried by at least one lateral flank of the waveguide parallel to a lateral plane defined by the longitudinal direction and the first transverse direction, said lateral corrugations having a height h′ along the first transverse direction and a dimension d along a second transverse direction perpendicular to the longitudinal direction, wherein
the lateral corrugations of the Bragg mirror extend from the top surface of the stack into a first layer of the stack made of a first one of the III-V materials, and the height h′ of the lateral corrugations is strictly less than the depth ha,
a second layer of the stack made of a second one of the III-V materials different from the first layer has a top surface in direct contact with the first layer and is formed over the active region,
a portion of the at least one lateral flank of the waveguide is free of any lateral corrugations, said portion being located at the at least one active region and at the second layer.